Electron g-factor in quantum wire in the presence of Rashba effect and magnetic field

In this paper, we study the electron effective Landé g-factor in the InAs quantum wire under an applied magnetic field and the Rashba effect. For this goal, we first present an analytic solution to one-particle Schrödinger equation in the presence of both magnetic field and spin–orbit interaction (SOI). Then, using the obtained energy levels, we study the electron effective Landé g-factor. It is found that: (i) The effective Landé g-factor decreases when magnetic field increases. (ii) By increasing the confinement length l0l0, the electron g-factor decreases. (iii) By increasing the strength of SOI, the electron g-factor increases.

► We study theoretically the electron effective Landé g-factor in semiconductor InAs quantum wire. ► The wire is under an applied magnetic field and the Rashba effect. ► The effective Landé g-factor decreases when magnetic field increases. ► By increasing the confinement length l0, the electron g-factor decreases.