Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:Î´Si high electron mobility transistors structures

Article ID	Journal	Published Year	Pages	File Type
1554191	Superlattices and Microstructures	2011	8 Pages	PDF

Abstract

âº 2DEG Confinement in InAs/GaAs/AlGaAs:Î´Si HEMTs with different Si content. âº We have observed two-modes (Lâ and L+), attributed to plasmon-LO phonon coupling. âº The wavenumbers and intensities of these two modes are dependent on Si content. âº The increase of Si content results in the increase of exciton-phonon scattering.

Keywords

Temperature-dependent photoluminescence Micro-Raman scattering Two-dimensional electron gas

Related Topics

Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials

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Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:Î´Si high electron mobility transistors structures

Authors

I. Dhifallah, M. Daoudi, A. Ouerghli, M. Oueslati, R. Chtourou,