| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554201 | Superlattices and Microstructures | 2011 | 8 Pages |
Abstract
⺠The forward bias I-V characteristics of the conducting polymer P3DMTPT interfaced to the p-Si have been explained by using the space-charge-limited current density model dominated by an exponential distribution of traps at high voltages. âºÎ¦b and diode quality of the Al/P3DMTPT/p-Si/Al structure are enhanced by using the hydrostatic pressure. ⺠The interface state density Nss under different hydrostatic pressure displays an exponential rise with bias from the midgap towards the bottom of the conduction band. ⺠The Nss decreases with the increasing hydrostatic pressure due to decreasing ideality factor.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
N. Ucar, A.F. Ozdemir, A. Calik, A. Kokce,