Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554214 | Superlattices and Microstructures | 2011 | 12 Pages |
Abstract
⺠Partial silicon on insulator lateral double diffused MOSFET is proposed. ⺠The introduced trench in the partial buried oxide enhances peak of electric field. ⺠The trench is positioned in drain side of drift region to maximum breakdown voltage. ⺠The electric field is modified by producing two additional electric field peaks.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ali A. Orouji, S.E. Jamali Mahabadi, P. Keshavarzi,