Article ID Journal Published Year Pages File Type
1554214 Superlattices and Microstructures 2011 12 Pages PDF
Abstract
► Partial silicon on insulator lateral double diffused MOSFET is proposed. ► The introduced trench in the partial buried oxide enhances peak of electric field. ► The trench is positioned in drain side of drift region to maximum breakdown voltage. ► The electric field is modified by producing two additional electric field peaks.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
A novel partial SOI LDMOSFET with a trench and buried P layer for breakdown voltage improvement
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