| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554379 | Superlattices and Microstructures | 2011 | 12 Pages |
Abstract
⺠We have investigated electronic properties of c-InGaN/AlInGaN. ⺠AlInGaN with appropriate Al and In can compensate the strain in InGaN QWs. ⺠Such results give new insights for III-nitride compounds based applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S. Ben Rejeb, A. Bhouri, M. Debbichi, J.-L. Lazzari, M. Said,