| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554427 | Superlattices and Microstructures | 2010 | 8 Pages |
Abstract
High electrostatic discharge (ESD) protection of GaN-based light-emitting diodes (LEDs) has been developed using a metal–oxide semiconductor (MOS) capacitor. This structure is realized by adopting various metal electrode patterns. The MOS capacitor can be implemented by extending the metal line directly from the p-type electrode to the top surface of an SiO2-capped n-GaN layer near the vicinity of the n-type electrode. By connecting a MOS capacitor in parallel with the GaN-based LED, the negative ESD strike could be significantly increased from 385 to 1075 V of human body mode (HBM).
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
P.C. Tsai, W.R. Chen, Y.K. Su,