Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554429 | Superlattices and Microstructures | 2010 | 9 Pages |
Abstract
Considering impurity doping in small sized carbon nanotubes of diameter around 0.4 nm, we have calculated the donor binding energy by increasing the dopant concentration through a screening function that includes the curvature effect. We could observe the sudden fall in donor binding energy and metallic behaviour of the smaller single walled carbon nanotubes around 1011/cm2 (0.0026%) of impurity concentration. This result is useful for nano electronic device application such as nano diodes and switches.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
R. Geetha, V. Gayathri,