Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554430 | Superlattices and Microstructures | 2010 | 8 Pages |
Abstract
The authors report the growth of high density ternary ZnCdSe nanowires on an oxidized Si(100) substrate using molecular beam epitaxy and the fabrication of a ZnCdSe nanowire photodetector. It was found that the as-grown ZnCdSe nanowires exhibited a mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that average length and width of the ZnCdSe nanowires were ∼1.8 μm and ∼42.7 nm, respectively. Furthermore, it was found that photocurrent to dark current contrast ratio was around 25 for the fabricated photodetector under 5 V applied bias.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S.J. Chang, C.H. Hsiao, B.W. Lan, S.C. Hung, B.R. Huang, S.J. Young, Y.C. Cheng, S.H. Chih,