Article ID Journal Published Year Pages File Type
1554435 Superlattices and Microstructures 2010 8 Pages PDF
Abstract
Using a variational approach, we have calculated the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum-well wires under different temperature and hydrostatic pressure conditions. Our calculation have revealed the dependence of the photoionization cross-section and the impurity binding on temperature and hydrostatic pressure.
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Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wires
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