Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554494 | Superlattices and Microstructures | 2010 | 11 Pages |
Abstract
The feasibility of applying the semi-superjunction (Semi-SJ) with SiGe-pillar (SGP) concept to Power MOSFET is studied in this paper. The electrical performances of SGP are compared with the conventional Power MOSFET through 3D device simulation work in terms of specific-on resistance (Ron)(Ron), breakdown-voltage (BV ), the effect to change the Ge mole fraction in the SGP and the thermal stabilization. The results show that the RonRon is reduced by 44% on the base of BVs reducing only 4.8%, tradeoff RonRon vs. BV and thermal stabilization of SGP are superior to that of conventional Semi-SJ since the strain effect inducing into the SGP structure in the low power device application.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ying Wang, Hai-fan Hu, Chao Cheng,