Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554532 | Superlattices and Microstructures | 2009 | 5 Pages |
Abstract
Al0.25Ga0.75N/AlN/GaN high electron mobility transistor (HEMT) structures were grown on (0 0 0 1) sapphire substrates with vicinal angles of 0.0â,0.25â,0.5â and 1.0â by metalorganic vapor phase epitaxy (MOVPE). Vicinal sapphire was demonstrated to enhance the step-flow growth to improve morphology, crystal and optical qualities, which eventually suppressed interface scattering and dislocation scattering to enhance the mobility of 2-dimension-electron-gas (2DEG). The optimum vicinal degree was determined to be 0.5â, and the corresponding 300 K Hall mobility and sheet resistance were 1720 cm2/V s and 301 Ω/sq, respectively. Furthermore, the temperature dependence of Hall measurements proved good high-temperature performance of the 0.5-off sample.
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Authors
Weiguo Hu, Bei Ma, Dabing Li, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu,