LDC–CNTFET: A carbon nanotube field effect transistor with linear doping profile channel

In this paper, a novel carbon nanotube field effect transistor with linear doping profile channel (LDC–CNTFET) is presented. The channel impurity concentration of the proposed structure is at maximum level at source side and linearly decreases toward zero at drain side. The simulation results show that the leakage current, on-off current ratio, subthreshold swing, drain induced barrier lowering, and voltage gain of the proposed structure improve in comparison with conventional CNTFET. Also, due to spreading the impurity throughout the channel region, the proposed structure has superior performance compared with a single halo CNTFET structure with equal saturation current. Design considerations show that the proposed structure enhances the device performance all over a wide range of channel lengths.

► We propose novel linear doping profile channel CNTFET (LDC–CNTFET). ► Current ratio improves compare with conventional and single halo CNTFET. ► Short channel effects improves compare with conventional and single halo CNTFET. ► Increasing the doping concentration of channel improves short channel effects.