| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554556 | Superlattices and Microstructures | 2011 | 9 Pages |
Abstract
⺠Transport mechanism in Schottky diode containing InAs quantum dots is investigated. ⺠Field emission was observed at low temperature and low voltages bias region. ⺠The ideality factor was found to follow the T0-effect. ⺠The decrease of the effective barrier height with measurement temperature.
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Physical Sciences and Engineering
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Electronic, Optical and Magnetic Materials
Authors
N. Hamdaoui, R. Ajjel, B. Salem, M. Gendry,