| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554566 | Superlattices and Microstructures | 2009 | 5 Pages |
Abstract
Epilayers of the quaternary alloy AlxInyGa1âxâyN have been grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The emission properties and elemental compositions of these samples were evaluated simultaneously and intercorrelated by combining hyperspectral cathodoluminescence imaging and wavelength-dispersive X-ray mapping. Use was made of inherent variations in growth temperature across a single epilayer to study the resultant effect on the different metal fractions and luminescence emission wavelength. By examining statistical correlations in this data, the interdependence of the fractions of constituent binary compounds, together with the associated changes in emission characteristics, can be clarified without the need to grow a systematic series of samples.
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Electronic, Optical and Magnetic Materials
Authors
P.R. Edwards, R.W. Martin, K. Bejtka, K.P. O'Donnell, S. Fernández-Garrido, E. Calleja,