Article ID Journal Published Year Pages File Type
1554581 Superlattices and Microstructures 2009 11 Pages PDF
Abstract
As the technique can be applied at room temperature, measurement conditions can be chosen which are relevant for device operation. The possibilities are illustrated for metal implanted and annealed Ge wafers. The obtained results are compared with those of capacitance-deep level transient spectroscopy analyses on similar samples, and with published results.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium
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