| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554582 | Superlattices and Microstructures | 2009 | 4 Pages |
Abstract
This paper presents the results of PL spectrum studies for Si nano-clusters in an amorphous silicon matrix. The four amorphous Si layers were prepared by the hot-wire CVD method on glass substrates at a temperature of 250 ∘C and different filament temperatures in the range of 1650–1950 ∘C. The joint analysis of PL and X ray diffraction results dependant on technological conditions has been done. PL bands deal with Si nanocrystals and amorphous Si nanoclusters are discussed as well.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
T.V. Torchynska,