| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554588 | Superlattices and Microstructures | 2009 | 6 Pages |
Abstract
Results demonstrating the ability of EBIC and CL methods for ELOG GaN films characterization are presented. It is shown that EBIC measurements allow us to estimate not only the lateral distribution of diffusion length but also the donor distribution in such films. Donor concentration is found to be different in slit and wing regions. A difference in CL and EBIC images is revealed, which is explained by band bending near the boundaries where two overgrowing fronts meet.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
E.B. Yakimov, P.S. Vergeles, A.V. Govorkov, A.Y. Polyakov, N.B. Smirnov, In-Hwan Lee, Cheul Ro Lee, S.J. Pearton,