Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554599 | Superlattices and Microstructures | 2009 | 7 Pages |
Abstract
The article shows the cathodoluminescence technique application to a quality analysis of a semiconductor multilayer heterostructures. Two structures with a GaAs quantum well embedded between the AlGaAs and GaInP barriers were investigated. The AlGaAs/GaAs/GaInP and GaInP/GaAs/AlGaAs structures were grown by MOCVD on a GaAs substrate. In this work we study the interface quality of quantum-dimensional GaAs layer by means of the local cathodoluminescence. Degradation and broadening of GaAs/GaInP interface occurring during the growth process of GaAs on GaInP layer was assumed to result in the formation of a layer with mixed composition at the interface. In addition, the presence of the layer prevented the formation of a quantum well in the GaAs layer. The transition layer was clearly observed by the cathodoluminescence. In the other case it was found that the growth of a structure with GaAs layer on top of AlGaAs produced a quantum well with a 10 nm thickness. The interface quality and layer thicknesses were also confirmed by the X-ray diffraction investigation of these structures.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A.A. Shakhmin, M.V. Zamoryanskaya, I.N. Arsentyev, S.G. Konnikov, D.A. Vinokurov, A.L. Stankevich, I.S. Tarasov,