| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554610 | Superlattices and Microstructures | 2009 | 7 Pages |
Abstract
An evaluation of the composition of the extra interlayer at the GaAs-on-InGaP inverted interface in MOVPE grown InxGa1âxP/GaAs heterostructures has been carried out by chemically sensitive (200) dark field TEM in the kinematical approximation. X-ray diffraction measurements have also been performed that showed that the extra interlayer had a negative strain to GaAs. In combination with this result the (200) dark field measurements allowed to establish that the extra interlayer can be either GaAs1âyPy (y=0.55) or InxGa1âxAs1âyPy with 0
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
C. Frigeri, G. Attolini, M. Bosi, C. Pelosi, F. Germini,