Laterally-grown ZnO-nanowire photodetectors on glass substrate

We propose a simple method to fabricate laterally-grown ZnO-nanowire photodetectors on glass substrates. It was found that cutoff of the fabricated photodetector occurred at ∼360 nm with a transition region of only 30 nm. With an incident light wavelength of 350 nm and an applied bias of 0.1 V, it was found that measured responsivity of the photodetector was 6.04×10−3 A/W with an ultraviolet-to-visible rejection ratio larger than 600.