Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554644 | Superlattices and Microstructures | 2011 | 10 Pages |
Abstract
Within the framework of effective-mass approximation, we have studied the effects of hydrostatic pressure on the binding energy of a shallow donor impurity in an infinite quantum well by means of a variational method. It is found that the first derivative of the binding energy and energy shift is reliable parameter for describing the structure.
► Hydrostatic pressure effects on the impurity states of GaAs/AlAs quantum wells are investigated. ► Energy eigenvalues of the system are obviously effected by the applied hydrostatic pressure. ► Impurity states depend on the well size.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
H. Akbas, I. Erdogan, O. Akankan,