Polarization fields in wurtzite strained layers grown on (hkℓhkℓ) planes

We calculate spontaneous and piezoelectric polarization fields in wurtzite crystals via the utilization of crystallography considerations, and elasticity theory. As an application of it, we derive equations appropriate to GaN–Ga1−xInxN quantum wells, heterostructures that have impact in realizing blue light emitting solid state devices, grown on (hkℓ)(hkℓ) planes. We show that some specific crystal orientations lead to a cancelation of the Quantum Confined Stark Effect in such heterostructures, whilst other orientations lead to a reduction of the density of elastic energy stored in the Ga1−xInxN layers. This imposes a compromise for device designers, if it is to improve the light emission efficiency of the related devices.