Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554678 | Superlattices and Microstructures | 2010 | 6 Pages |
Abstract
In this work, we studied the effect of some growth parameters on the polarization behavior of InAs/GaAs closely stacked quantum dot (CSQDs). In particular, we focused on the surface reconstruction time of GaAs spacer, its thickness and the number of QD layers. We found that the most effective parameter to enhance the TM/TE intensity ratio is the surface reconstruction time of the GaAs spacer before the subsequent QD deposition. By varying this parameter between 20Â s and 120Â s, a TM/TE ratio as high as 0.86 has been achieved. A further fine tuning of GaAs spacer thickness and QD layer number increased this ratio up to a value of 0.92 in structures containing only 3 QD layers.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
L. Fortunato, M.T. Todaro, V. Tasco, M. De Giorgi, M. De Vittorio, R. Cingolani, A. Passaseo,