Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554682 | Superlattices and Microstructures | 2010 | 5 Pages |
Abstract
We have studied micro-photoluminescence spectra of a self-assembled single GaAs quantum dot under 8Â K. With strong pulsed excitation, the micro-photoluminescence spectrum shows bright emission lines originated from an exciton, a positively charged exciton, and a biexciton, together with weak lower energy emissions reflecting multi-excitonic structures with more carriers. We have identified the origins of these weak emission lines, and showed the existence of charged biexciton states, through single photon correlation measurements and excitation power dependence of the photoluminescence intensity. In addition, investigating the radiative recombination process of the charged biexciton, we have determined the electron-hole exchange energy in the GaAs quantum dot.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Y. Arashida, Y. Ogawa, F. Minami,