Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554684 | Superlattices and Microstructures | 2010 | 5 Pages |
Abstract
We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
B. Lassen, M. Willatzen, D. Barettin,