| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554686 | Superlattices and Microstructures | 2010 | 5 Pages |
Abstract
We have investigated efficiency droop in InGaN-based blue LEDs by considering radiative, nonradiative, and carrier spillover processes in the context of internal quantum efficiency (IQE) vs. injection current. If relied on fitting only, both the Auger recombination and an empirical formula for carrier spillover are consistent with experiments. However, the dependence of IQE on quantum well parameters and lack of droop in optical pumping experiments support the notion that carrier spillover is the main mechanism in play.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Xing Li, Huiyong Liu, X. Ni, Ümit Özgür, Hadis Morkoç,