Article ID Journal Published Year Pages File Type
1554688 Superlattices and Microstructures 2010 5 Pages PDF
Abstract
A novel epitaxial lift-off process for III-nitrides, involving selective removal of a sacrificial (Al, In)N layer in a hot nitric acid etchant, is reported. This was applied to the fabrication of 1−λ GaN planar microcavities bounded by two dielectric DBRs, starting from epitaxial GaN-(Al, In)N-GaN trilayers grown on free-standing GaN or high-quality GaN template material. An optically smooth surface was retained on the GaN (0001̄) surface exposed to the nitric acid etch, with root mean square roughness values as low as 2 nm over 8 μm×8 μm areas. Photoluminescence and reflectivity spectra were recorded from completed microcavities, and the latter showed clear dips in the region of 3.5 eV.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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