Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554688 | Superlattices and Microstructures | 2010 | 5 Pages |
Abstract
A novel epitaxial lift-off process for III-nitrides, involving selective removal of a sacrificial (Al, In)N layer in a hot nitric acid etchant, is reported. This was applied to the fabrication of 1âλ GaN planar microcavities bounded by two dielectric DBRs, starting from epitaxial GaN-(Al, In)N-GaN trilayers grown on free-standing GaN or high-quality GaN template material. An optically smooth surface was retained on the GaN (0001Ì) surface exposed to the nitric acid etch, with root mean square roughness values as low as 2 nm over 8 μmÃ8 μm areas. Photoluminescence and reflectivity spectra were recorded from completed microcavities, and the latter showed clear dips in the region of 3.5 eV.
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Authors
C. Xiong, F. Rizzi, K. Bejtka, P.R. Edwards, E. Gu, M.D. Dawson, R.W. Martin, I.M. Watson,