| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554780 | Superlattices and Microstructures | 2009 | 6 Pages |
Abstract
We report the growth of single crystalline ZnSe nanowires on oxidized Si(100) substrates by molecular-beam epitaxy using Au nano-particles as the catalysts. It was found that average length decreased while the average diameter increased as we increased the temperature from 230 to 320Â âC. It was also found that crystal quality of the ZnSe nanowires prepared at 320Â âC was poorer than the ZnSe nanowires prepared at 230Â âC and 280Â âC.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
C.H. Hsiao, S.J. Chang, S.B. Wang, S.C. Hung, S.P. Chang, T.C. Li, W.J. Lin, B.R. Huang,