Effect of laser intensity on the semiconductor–metal transition in a doped Quantum Well

We demonstrate laser induced semiconductor–metal transition through an abrupt change in diamagnetic susceptibility of a donor at critical concentration in a GaAs/AlxGa1−xAs Quantum Well for finite barrier model in the effective mass approximation using variational principle. We have considered Anderson‘s localization due to the random distribution of impurities in our calculation. The nonparabolicity of the conduction band is also considered. Our results without laser field agree with the earlier theoretical results and also with the recent experimental results.