| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554799 | Superlattices and Microstructures | 2009 | 5 Pages |
Abstract
Transport properties of a magnetic barrier in a GaxAl1âxAs based two-dimensional hole gas are reported. A ferromagnetic cobalt film, separated by an AlOx layer from the semiconductor in order to prevent leakage currents, is magnetized in-plane, such that the fringe field generates a localized perpendicular magnetic field acting as a magnetic barrier. The resistance as a function of the in-plane magnetic field shows a characteristic minimum at the coercive field of the ferromagnetic film. Semiclassical simulations based on the Landauer-Büttiker formalism show good agreement with the experiment.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Cerchez, T. Heinzel, D. Reuter, A.D. Wieck,