Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554829 | Superlattices and Microstructures | 2008 | 6 Pages |
Abstract
In this study, the influence of the surface layer (p-InGaN or p-GaN) capping p-InGaN/p-GaN superlattices (SLs) on the contact to p-type GaN was investigated. It was found that the specific contact resistance (ρc)(ρc) to p-type GaN is lower when using p-InGaN as the surface layer. The lowest value of ρcρc was 1.99×10−4 Ω cm2 at room temperature. It was also found that low temperature growth of the p-GaN layers in the SLs is beneficial for lowering the ohmic contact resistance. Unlike Ni/Au deposited directly on p-GaN (without the strained p-InGaN/p-GaN SLs), Ni/Au deposited on p-InGaN/p-GaN SLs produces ohmic behavior even before annealing.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yian Yin, Baolin Liu, Baoping Zhang, Guoxing Lin,