Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554837 | Superlattices and Microstructures | 2008 | 6 Pages |
Abstract
Pine-needle-shaped GaN nanorods have been successfully synthesized on Si(111) substrates by ammoniating Ga2O3/Nb films at 950 ∘C in a quartz tube. The products are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and field-emission transmission electron microscope (FETEM). The results show that the pine-needle-shaped nanorods have a pure hexagonal GaN wurtzite with a diameter ranging from 100 to 200 nm and a length up to several microns. The photoluminescence spectra (PL) measured at room temperature only exhibit a strong emission peak at 368 nm. Finally, the growth mechanism of GaN nanorods is also briefly explored.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Bao-li Li, Hui-zhao Zhuang, Cheng-shan Xue, Shi-ying Zhang,