Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554866 | Superlattices and Microstructures | 2008 | 5 Pages |
Abstract
The excitonic Mott transition in single and double quantum wells is studied using the Green’s function technique. An abrupt jump in the value of the ionization degree, which happens with an increase of the carrier density or temperature, is found in a certain density–temperature region. The opposite effect–the collapse of the electron–hole plasma into an insulating exciton system–is predicted to occur at lower densities. The critical density of the Mott transition for spatially indirect excitons may be much smaller than that for direct excitons.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
V.V. Nikolaev, M.E. Portnoi,