Article ID Journal Published Year Pages File Type
1554918 Superlattices and Microstructures 2009 8 Pages PDF
Abstract

Laser effects on the electronic states in GaAs/ Ga1−xAlxAs V-shaped and inverse V-shaped quantum wells under a static electric field are studied using the transfer matrix method. The dependence of the donor binding energy on the laser field strength and the density of states associated with the impurity is also calculated. It is demonstrated that in inverse V-shaped quantum wells under electric fields, with an asymmetric distribution of the electron density, the position of the binding energy maximum versus the impurity location in the structure can be adjusted by the intensity of the laser field. This effect could be used to tune the electronic levels in quantum wells operating under electric and laser fields without modifying the physical size of the structures.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Authors
, , ,