| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554936 | Superlattices and Microstructures | 2008 | 10 Pages |
Abstract
The optical and electronic properties of (GaAs)n/(InAs)n superlattices are calculated by means of LMTO-ASA method. The too small band gap problem of bulk material and superlattices is corrected by adding to the effective potentials an additional external potential that is sharply peaked at the atomic sites. The results show that the optical properties of GaAs/InAs(001) superlattices are about average of that of two bulks of GaAs and InAs.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kaihang Li, Junlin Zhang,