Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554968 | Superlattices and Microstructures | 2007 | 5 Pages |
Abstract
In the last years GaN-based heterostructures have attracted much attention for their application as optoelectronic devices. The strain due to lattice mismatch of the constituent materials plays a crucial role in the behaviour of these structures, especially if they are of reduced dimensions, as e.g. nanocolumns. We show an implementation of a new device simulator which accounts for strain-related effects and quantum mechanical properties and couples them with the transport of the quasi-particles in the system. Simulations of an AlGaN/GaN nanocolumn LED are reported as an example.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Auf der Maur, M. Povolotskyi, F. Sacconi, A. Di Carlo,