| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554974 | Superlattices and Microstructures | 2007 | 5 Pages |
Abstract
We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using “upper” and “lower” silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin,