| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1555017 | Superlattices and Microstructures | 2008 | 6 Pages |
Abstract
The mechanism of selective epitaxial growth of InAs quantum dots on (110) AlAs/GaAs cleaved facets has been considered from a theoretical point of view. In particular, the role of the large difference in the diffusion length of In adatoms on GaAs and AlAs surfaces has been assessed. A simple one-dimensional model agrees with the experimental results, and explains the strong migration behavior of In(As) towards (110) AlAs stripes.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
E. Uccelli, S. Nürnberger, M. Bichler, G. Abstreiter, A. Fontcuberta i Morral,