Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1555057 | Superlattices and Microstructures | 2006 | 11 Pages |
Abstract
Design considerations for a below 100 nm channel length SOI MOSFET with electrically induced shallow source/drain junctions are presented. Our simulation results demonstrate that the application of induced source/drain extensions to the SOI MOSFET will successfully control the SCEs and improve the breakdown voltage even for channel lengths less than 50 nm. We conclude that if the side gate length equals the main gate length, the hot electron effect diminishes optimally.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ali A. Orouji, M. Jagadesh Kumar,