Article ID Journal Published Year Pages File Type
1555057 Superlattices and Microstructures 2006 11 Pages PDF
Abstract

Design considerations for a below 100 nm channel length SOI MOSFET with electrically induced shallow source/drain junctions are presented. Our simulation results demonstrate that the application of induced source/drain extensions to the SOI MOSFET will successfully control the SCEs and improve the breakdown voltage even for channel lengths less than 50 nm. We conclude that if the side gate length equals the main gate length, the hot electron effect diminishes optimally.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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