Design and fabrication of a SiGe double quantum well structure for g-factor tuning

We propose a double quantum well device structure that allows for g-factor tuning by moving a two-dimensional electron gas between layers with different g-factors by applying a gate voltage. We present self-consistent model calculations showing that the electron wavefunction can be shifted almost completely in between the layers. We produced and characterized the double quantum well structure according the parameters from the optimum model calculations. First results are presented indicating that g-factor tuning really is possible within the envisioned device structure.