Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1555072 | Superlattices and Microstructures | 2008 | 10 Pages |
Abstract
The density of donor impurity states in a square GaAs-AlGaAs quantum well under an intense laser field is calculated taking into account the laser dressing effects on both the Coulomb potential and the confining potential. Using the effective-mass approximation within a variational scheme, the donor binding energy is obtained as a function of the laser dressing parameter, and the impurity position. Our results point out that a proper consideration of the density of impurity states may be of relevance in the interpretation of the optical phenomena related to shallow impurities in quantum wells, where the effects of an intense laser field compete with the quantum confinement.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
E.C. Niculescu, L.M. Burileanu, A. Radu,