| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1555079 | Superlattices and Microstructures | 2008 | 7 Pages |
Abstract
The structural and electronic properties of the GaAs1−xBix ternary alloy are investigated by means of two first principles and full potential methods, the linear augmented plane waves (FPLAPW) method and a recent version of the full potential linear muffin-tin orbitals method (FPLMTO) which enables an accurate treatment of the interstitial regions. In particular, we have found that the maximal GaBi mole fraction xx for which GaBixAs1−x remains a semiconductor is probably around x=0.5x=0.5. The electronic properties of (GaAs)m/(GaBi)n quantum well superlattices (SLs) have also been calculated and it is found that such SLs are semiconductors when mm is larger or equal to nn.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
H. Achour, S. Louhibi, B. Amrani, A. Tebboune, N. Sekkal,