| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1555108 | Superlattices and Microstructures | 2008 | 7 Pages |
Abstract
In this work, the characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with various emitter-ledge thicknesses are comprehensively studied and demonstrated. Based on the two-dimensional analysis, some important parameters such as the recombination rate and DC characteristics are studied. The simulated analyses are in good agreement with experimental results. It is known that better HBT performance, including lower recombination rate in the surface channel, and higher DC current gain are obtained in the studied devices with the emitter ledge thickness between 100 and 200 Å.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kuei-Yi Chu, Shiou-Ying Cheng, Tzu-Pin Chen, Ching-Wen Hung, Li-Yang Chen, Tsung-Han Tsai, Wen-Chau Liu, Lu-An Chen,