Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1555117 | Superlattices and Microstructures | 2007 | 5 Pages |
Abstract
The crystalline, optical and electrical properties of N-doped ZnO thin films were measured using X-ray diffraction, photoluminescence and Hall effect apparatus, respectively. The samples were grown using pulsed laser deposition on sapphire substrates coated priorly with ZnO buffer layers. For the purpose of acceptor doping, an electron cyclotron resonance (ECR) plasma source operated as a low-energy ion source was used for nitrogen incorporation in the samples. The X-ray diffraction analyses indicated some deterioration of the ZnO thin film with nitrogen incorporation. Temperature-dependent Van der Pauw measurements showed consistent p-type behavior over the measured temperature range of 200-450 K, with typical room temperature hole concentrations and mobilities of 5Ã1015Â cmâ3 and 7Â cm2/VÂ s, respectively. Low temperature photoluminescence spectra consisted of a broad emission band centered around 3.2Â eV. This emission is characterized by the absence of the green deep-defect band and the presence of a band around 3.32Â eV.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S. Chakrabarti, B. Doggett, R. O'Haire, E. McGlynn, M.O. Henry, A. Meaney, J.-P. Mosnier,