| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1555120 | Superlattices and Microstructures | 2007 | 7 Pages |
Abstract
Thin films of ZnO have been grown by plasma assisted metal-organic chemical vapour deposition (PA-MOCVD) using a 13.56Â MHz O2 plasma and the Zn(TTA)2
- tmed (HTTA=2-thenoyltrifluoroacetone, TMED=N,N,Nâ²,Nâ²-tetramethylethylendiamine) precursor. The effects of growth parameters such as the plasma activation, the substrate, the surface temperature, and the ratio of fluxes of precursors on the structure, morphology, and optical and electrical properties of ZnO thin films have been studied. Under a very low plasma power of 20Â W, c-axis oriented hexagonal ZnO thin films are grown on hexagonal sapphire (0001), cubic Si(001) and amorphous quartz substrates. The substrate temperature mainly controls grain size.
- tmed (HTTA=2-thenoyltrifluoroacetone, TMED=N,N,Nâ²,Nâ²-tetramethylethylendiamine) precursor. The effects of growth parameters such as the plasma activation, the substrate, the surface temperature, and the ratio of fluxes of precursors on the structure, morphology, and optical and electrical properties of ZnO thin films have been studied. Under a very low plasma power of 20Â W, c-axis oriented hexagonal ZnO thin films are grown on hexagonal sapphire (0001), cubic Si(001) and amorphous quartz substrates. The substrate temperature mainly controls grain size.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Losurdo, M.M. Giangregorio, A. Sacchetti, P. Capezzuto, G. Bruno, G. Malandrino, I.L. Fragalà ,