| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1555174 | Superlattices and Microstructures | 2007 | 5 Pages |
Abstract
We investigated the material and electrical properties of Li doped ZnO thin film (ZLO) with variation of the annealing temperature. In the 500 ∘C sample, ZLO film showed well defined (002) cc-axis orientation and a full width half-maximum property of 0.25∘. The electrical properties of ZLO thin films showed the excellent specific resistance of 1.5×1011 Ω cm. Finally, the frequency characteristics of the ZLO thin film FBAR, according to the annealing temperature, showed improvement of the return loss from 24.48 to 30.02 dB at a resonant frequency of 1.17 GHz.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Eung Kwon Kim, Young Sung Kim,