Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1555204 | Superlattices and Microstructures | 2006 | 5 Pages |
Abstract
We fabricated high-quality InAlN/GaN heterostructures by metal-organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000Â cm2/VÂ s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (Ns) for the first time. Ns increased from 1.0Ã1012 to 2.7Ã1013Â cmâ2 when the Al composition increased from 0.78 to 0.89.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Hiroki, H. Yokoyama, N. Watanabe, T. Kobayashi,