Article ID Journal Published Year Pages File Type
1555209 Superlattices and Microstructures 2006 7 Pages PDF
Abstract
The structural properties of a 10 μm thick In-face InN film, grown on Al2O3 (0001) by radio-frequency plasma-assisted molecular beam epitaxy, were investigated by transmission electron microscopy and high resolution x-ray diffraction. Electron microscopy revealed the presence of threading dislocations of edge, screw and mixed type, and the absence of planar defects. The dislocation density near the InN/sapphire interface was 1.55×1010 cm−2, 4.82×108 cm−2 and 1.69×109 cm−2 for the edge, screw and mixed dislocation types, respectively. Towards the free surface of InN, the density of edge and mixed type dislocations decreased to 4.35×109 cm−2 and 1.20×109 cm−2, respectively, while the density of screw dislocations remained constant. Using x-ray diffraction, dislocations with screw component were found to be 1.2×109 cm−2, in good agreement with the electron microscopy results. Comparing electron microscopy results with x-ray diffraction ones, it is suggested that pure edge dislocations are neither completely randomly distributed nor completely piled up in grain boundaries within the InN film.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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