Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1555209 | Superlattices and Microstructures | 2006 | 7 Pages |
Abstract
The structural properties of a 10 μm thick In-face InN film, grown on Al2O3 (0001) by radio-frequency plasma-assisted molecular beam epitaxy, were investigated by transmission electron microscopy and high resolution x-ray diffraction. Electron microscopy revealed the presence of threading dislocations of edge, screw and mixed type, and the absence of planar defects. The dislocation density near the InN/sapphire interface was 1.55Ã1010 cmâ2, 4.82Ã108 cmâ2 and 1.69Ã109 cmâ2 for the edge, screw and mixed dislocation types, respectively. Towards the free surface of InN, the density of edge and mixed type dislocations decreased to 4.35Ã109 cmâ2 and 1.20Ã109 cmâ2, respectively, while the density of screw dislocations remained constant. Using x-ray diffraction, dislocations with screw component were found to be 1.2Ã109 cmâ2, in good agreement with the electron microscopy results. Comparing electron microscopy results with x-ray diffraction ones, it is suggested that pure edge dislocations are neither completely randomly distributed nor completely piled up in grain boundaries within the InN film.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
E. Dimakis, J.Z. Domagala, A. Delimitis, Ph. Komninou, A. Adikimenakis, E. Iliopoulos, A. Georgakilas,