A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

The paper evaluates the optimal design of the low-doped base region inside power diodes and other bipolar devices. It is demonstrated theoretically that a low-doped base region of P+N−N+ diodes can provide a high breakdown voltage and an optimal on-resistance Ron. A simple, accurate and CPU timesaving approach is presented to extract an optimal value for the base region width, WB, and its doping concentration, ND. The paper details an analytical relation between WB and ND, and gives a method for quantifying the trade-off between their values for a given breakdown voltage and for obtaining the minimal on-resistance. Analytical results are confronted with experimental results for 4H-SiC- and 6H-SiC-based diodes.