Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1555273 | Superlattices and Microstructures | 2006 | 7 Pages |
Abstract
A new Schottky diode, Al/p-GaSe, was presented in this study. It shows an effective barrier height of 0.96 eV with an ideality factor of 1.24 over five decades and a reverse leakage current density of 4.12×10−7 A/cm2 at −2 V after rapid thermal annealing at 400 ∘C for 30 s. The generation–recombination effect of the Schottky diode was decreased as the annealing temperature was increased. The formation of Al1.33Se2 was observed by X-ray diffraction analysis after the diode was annealed at 400 ∘C for 30 s. Owing to the grains’ growth, the surface morphology of the 400 ∘C-annealed diode was rougher than that of the unannealed diode, which was observed both by the AFM and the SEM analysis.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Wen-Chang Huang, Shui-Hsiang Su, Yu-Kuei Hsu, Chih-Chia Wang, Chen-Shiung Chang,